hi-sincerity microelectronics corp. spec. no. : mos200101) issued date : 2008.01.12 revised date :2009.02.06 page no. : 1/5 H4435S hsmc product specification H4435S ? 8-lead plastic so-8 package code: s pin 1 / 2 / 3: source pin 4: gate pin 5 / 6 / 7 / 8: drain H4435S symbol & pin assignment 1 2 3 4 8 7 6 5 p-channel enhancement-mode mo sfet (-30v, -9.1a) features ? r ds(on) =20m @v gs =-10v, i d =-9.1a ? r ds(on) =35m @v gs =-4.5v, i d =-6.9a ? advanced trench process technology ? high density cell design for ultra low on-resistance absolute maximum ratings (t a =25 o c, unless otherwise noted) symbol parameter ratings units v ds drain-source voltage -30 v v gs gate-source voltage 20 v i d drain current (continuous) -9.1 a i dm drain current (pulsed) *1 -50 a p d total power dissipation @t a =25 o c 2.5 w t j , t stg operating and storage temper ature range -55 to +150 c r ja thermal resistance junction to ambient (pcb mounted) *2 50 c/w *1: maximum dc current limited by the package *2: 1-in 2 2oz cu pcb board
hi-sincerity microelectronics corp. spec. no. : mos200101) issued date : 2008.01.12 revised date :2009.02.06 page no. : 2/5 H4435S hsmc product specification electrical characteristics (t a =25 c, unless otherwise noted) symbol characteristic test c onditions min. typ. max. unit ? static bv dss drain-source breakdown voltage v gs =0v, i d =-250ua 30 - - v v gs =-10v, i d =-9.1a - 15 20 r ds(on) drain-source on-state resistance v gs =-4.5v, i d =-6.9a - 20 35 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v i dss zero gate voltage drain current v ds =-30v, v gs =0v - - -1 ua i gss gate-body leakage current v gs = 20v, v ds =0v - - 100 na g fs forward transconductance v ds =-10v, i d =-9.1a 21 - s ? dynamic q g total gate charge - 20 30 q gs gate-source charge - 3.43 - q gd gate-drain charge v ds =-24v, i d =-7.0a, v gs =-4.5v - 11 - nc c iss input capacitance - 1210 1720- c oss output capacitance - 205 - c rss reverse transfer capacitance v ds =-25v, v gs =0v, f=1mhz - 195 - pf t d(on) turn-on delay time - 10 - t r turn-on rise time - 7.0 - t d(off) turn-off delay time - 45 - t f turn-off fall time v dd =-15v, r l =15 , i d =-1a, v gen =-10v, r g =3.3 - 35 - ns ? drain-source diode characteristics i s maximum diode forward current - - -2.1 a v sd drain-source diode forward voltage v gs =0v, i s =-2.1a - - -1.2 v note: pulse test: pulse width 300us, duty cycle 2%
hi-sincerity microelectronics corp. spec. no. : mos200101) issued date : 2008.01.12 revised date :2009.02.06 page no. : 3/5 H4435S hsmc product specification characteristics curve 0 2 4 6 8 10 12 14 16 18 20 22 24 0123 vds,drain-to-source voltage(v) id,drain current 4 ( ta=25 -3.0v -10 v -5.0 v fig 1.typical output characteristics 0 5 10 15 20 25 0123456 vds,drain-to-source voltage(v) id,drain current ( ta=150 -10v -5.0v -3.0v fig 2.typical output characteristics 15 17.5 20 22.5 25 2 4 6 8 10 12 vgs, ga t e - t o - so ur c e vo lt a ge ( v) rds(on)(m 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 tj,junction temperature( ) normalized rds( o fig 4.normalized on-resistance v.s.junction temperature id=9.1a vg s =10 v fig 3.on-resistance v.s.gate voltage id=6.9a ta=25 ? 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 vsd,source-to-drain voltage(v) is(a ) fig 5.forward characteris tic of revers e diode tj=150 tj=25 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j,junction t emperature( ) vgs(th)( v fig 6.gate threshold voltage v.s.junction temperature
hi-sincerity microelectronics corp. spec. no. : mos200101) issued date : 2008.01.12 revised date :2009.02.06 page no. : 4/5 H4435S hsmc product specification so-8 dimension important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 a b f c d e g part a i h j k o m l n part a 234 5 6 7 8 pin1 index pin style: 1,2,3: source 4: gate 5,6,7,8: drain note: green label is used for pb-free packing material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 8-lead so-8 plastic surface mounted package hsmc package code: s h9435s marking: dim min. max. a 4.85 5.10 b 3.85 3.95 c 5.80 6.20 d 1.22 1.32 e 0.37 0.47 f 3.74 3.88 g 1.45 1.65 h 4.80 5.10 i 0.05 0.20 j 0.30 0.70 k 0.19 0.25 l 0.37 0.52 m 0.23 0.28 n 0.08 0.13 o 0.00 0.15 *: typical, unit: mm
hi-sincerity microelectronics corp. spec. no. : mos200101) issued date : 2008.01.12 revised date :2009.02.06 page no. : 5/5 H4435S hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 5sec 1sec pb-free devices. 260 o c +0/-5 o c 5sec 1sec
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